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用于平面鈣鈦礦太陽能電池的由氣相生長MAPbI3−xClx制備的原子層沉積TiO2

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發表于 2019-1-2 14:01:23 | 只看該作者 回帖獎勵 |倒序瀏覽 |閱讀模式
Atomic-layer-deposited TiO2 with vapor-grown MAPbI3−xClx for planar perovskite solar cells
用于平面鈣鈦礦太陽能電池的由氣相生長MAPbI3−xClx制備的原子層沉積TiO2

Journal of Vacuum Science & Technology A 37, 010902 (2019);

https://doi.org/10.1116/1.5052287

Sungjae Na1, Sayah Lee2, Won-Gyu Choi1, Chan-Gyu Park1, Sang Ouk Ryu2,a), and Taeho Moon1,b)
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1Department of Materials Science and Engineering, Dankook University, Cheonan 31116, South Korea
2Department of Electronics and Electrical Engineering, Dankook University, Yongin 16890, South Korea
a)Electronic mail: [email protected]
b)Electronic mail: [email protected]

ABSTRACT
摘要

TiO2 thin films as electron-transporting layers for planar-type perovskite solar cells were prepared by atomic layer deposition (ALD). Perovskite MAPbI3−xClx thin films were formed on the ALD TiO2 by sequential vapor processing. The resulting perovskitethin films were uniform and pinhole-free, with an average grain size of ~370 nm. The high crystallinity of the perovskite layers was also confirmed, with an optical bandgap of ~1.58 eV. Planar n-i-psolar cells were formed using the ALD TiO2 and vapor-grown perovskite. The deposition temperature and thickness of the ALD TiO2 were optimized, resulting in a superior efficiency of ~11.6% compared to conventional TiO2.

        通過原子層沉積(ALD)制備了作為平面型鈣鈦礦太陽能電池的電子傳輸層的TiO2薄膜。通過順序蒸汽處理在ALD TiO2上形成鈣鈦礦MAPbI3−xClx薄膜。所得到的鈣鈦礦薄膜均勻且無針孔,平均晶粒尺寸為~370nm。還證實了鈣鈦礦層的高結晶度,光學帶隙為~1.58eV。使用ALD TiO2和氣相生長的鈣鈦礦形成平面n-i-p型太陽能電池。優化了ALD TiO2的沉積溫度和厚度,與常規TiO2相比,其效率更高,可達~11.6%


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